基于高效大气等离子体刻蚀的β-Ga2O3原子级光滑表面制造技术

doi:10.1088/2631-7990/ad8711

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Zhang Y J, Xiao Y X, Liang J W, Zhang C, Deng H. 2025. Towards atomic-scale smooth surface manufacturing of β-Ga2O3 via highly efficient atmospheric plasma etching. Int. J. Extrem. Manuf. 7 015105. DOI: 10.1088/2631-7990/ad8711

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Zhang Y J, Xiao Y X, Liang J W, Zhang C, Deng H. 2025. Towards atomic-scale smooth surface manufacturing of β-Ga2O3 via highly efficient atmospheric plasma etching. Int. J. Extrem. Manuf. 7 015105. DOI: 10.1088/2631-7990/ad8711

Citation:

Zhang Y J, Xiao Y X, Liang J W, Zhang C, Deng H. 2025. Towards atomic-scale smooth surface manufacturing of β-Ga2O3 via highly efficient atmospheric plasma etching. Int. J. Extrem. Manuf. 7 015105. DOI: 10.1088/2631-7990/ad8711

基于高效大气等离子体刻蚀的β-Ga₂O₃原子级光滑表面制造技术

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基于高效大气等离子体刻蚀的β-Ga2O3原子级光滑表面制造技术

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基于高效大气等离子体刻蚀的β-Ga₂O₃原子级光滑表面制造技术