<span style="text-wrap: wrap;">基于线数定制的IGO沟道2T0C DRAM设计：匹配传统1T1C 2线操作，实现高缩放存储单元体积</span>

doi:10.1088/2631-7990/add7a3

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Kwag J H, Choi S H, Kim D, Lee J Y, Hwang T, Oh H J, Park C K, Park J S. 2025. Tailoring the number of lines for IGO-channel 2T0C DRAM comparable to conventional 2-line operation 1T1C structure for highly scaled cell volume. Int. J. Extrem. Manuf. 7 055503.. DOI: 10.1088/2631-7990/add7a3

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Kwag J H, Choi S H, Kim D, Lee J Y, Hwang T, Oh H J, Park C K, Park J S. 2025. Tailoring the number of lines for IGO-channel 2T0C DRAM comparable to conventional 2-line operation 1T1C structure for highly scaled cell volume. Int. J. Extrem. Manuf. 7 055503.. DOI: 10.1088/2631-7990/add7a3

Citation:

Kwag J H, Choi S H, Kim D, Lee J Y, Hwang T, Oh H J, Park C K, Park J S. 2025. Tailoring the number of lines for IGO-channel 2T0C DRAM comparable to conventional 2-line operation 1T1C structure for highly scaled cell volume. Int. J. Extrem. Manuf. 7 055503.. DOI: 10.1088/2631-7990/add7a3

基于线数定制的IGO沟道2T0C DRAM设计：匹配传统1T1C 2线操作，实现高缩放存储单元体积

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基于线数定制的IGO沟道2T0C DRAM设计：匹配传统1T1C 2线操作，实现高缩放存储单元体积

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