Scalable fabrication of mid-wavelength and long-wavelength infrared photodetectors based on narrow bandgap semiconductors: challenges and opportunities

doi:10.1088/2631-7990/ae0100

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Moon J H, Nam S Y, Kim S, Zha J J, Tan C L, Kim H. 2026. Scalable fabrication of mid-wavelength and long-wavelength infrared photodetectors based on narrow bandgap semiconductors: challenges and opportunities. Int. J. Extrem. Manuf. 8 012012.. DOI: 10.1088/2631-7990/ae0100.

Citation:

Moon J H, Nam S Y, Kim S, Zha J J, Tan C L, Kim H. 2026. Scalable fabrication of mid-wavelength and long-wavelength infrared photodetectors based on narrow bandgap semiconductors: challenges and opportunities. Int. J. Extrem. Manuf. 8 012012.. DOI: 10.1088/2631-7990/ae0100.

Citation:

Moon J H, Nam S Y, Kim S, Zha J J, Tan C L, Kim H. 2026. Scalable fabrication of mid-wavelength and long-wavelength infrared photodetectors based on narrow bandgap semiconductors: challenges and opportunities. Int. J. Extrem. Manuf. 8 012012.. DOI: 10.1088/2631-7990/ae0100.

Scalable fabrication of mid-wavelength and long-wavelength infrared photodetectors based on narrow bandgap semiconductors: challenges and opportunities

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Scalable fabrication of mid-wavelength and long-wavelength infrared photodetectors based on narrow bandgap semiconductors: challenges and opportunities

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