In-situ post-doping plasma process during atomic layer deposition of Al-doped TiO<sub>2</sub> for sub-nanometer lattice ordering and defect annihilation

doi:10.1088/2631-7990/ae037b

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Lee G, Sunwoo Y M, Kim H J, Han G, Oh J, Lee S, Kim B, An J. 2026. In-situ post-doping plasma process during atomic layer deposition of Al-doped TiO2 for sub-nanometer lattice ordering and defect annihilation. Int. J. Extrem. Manuf. 8 015101. DOI: 10.1088/2631-7990/ae037b.

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Lee G, Sunwoo Y M, Kim H J, Han G, Oh J, Lee S, Kim B, An J. 2026. In-situ post-doping plasma process during atomic layer deposition of Al-doped TiO2 for sub-nanometer lattice ordering and defect annihilation. Int. J. Extrem. Manuf. 8 015101. DOI: 10.1088/2631-7990/ae037b.

Citation:

Lee G, Sunwoo Y M, Kim H J, Han G, Oh J, Lee S, Kim B, An J. 2026. In-situ post-doping plasma process during atomic layer deposition of Al-doped TiO2 for sub-nanometer lattice ordering and defect annihilation. Int. J. Extrem. Manuf. 8 015101. DOI: 10.1088/2631-7990/ae037b.

In-situ post-doping plasma process during atomic layer deposition of Al-doped TiO₂ for sub-nanometer lattice ordering and defect annihilation

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In-situ post-doping plasma process during atomic layer deposition of Al-doped TiO2 for sub-nanometer lattice ordering and defect annihilation

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In-situ post-doping plasma process during atomic layer deposition of Al-doped TiO₂ for sub-nanometer lattice ordering and defect annihilation