Chang S Y, Yan Y D, Li C, Geng Y Q. 2026. Enhanced photoresponse in WSe2/MoS2 heterobilayers optoelectronic device via programmable local nanostrain engineering. Int. J. Extrem. Manuf. 8 015512.. DOI: 10.1088/2631-7990/ae15c8.
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Citation:
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Chang S Y, Yan Y D, Li C, Geng Y Q. 2026. Enhanced photoresponse in WSe2/MoS2 heterobilayers optoelectronic device via programmable local nanostrain engineering. Int. J. Extrem. Manuf. 8 015512.. DOI: 10.1088/2631-7990/ae15c8.
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Chang S Y, Yan Y D, Li C, Geng Y Q. 2026. Enhanced photoresponse in WSe2/MoS2 heterobilayers optoelectronic device via programmable local nanostrain engineering. Int. J. Extrem. Manuf. 8 015512.. DOI: 10.1088/2631-7990/ae15c8.
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Citation:
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Chang S Y, Yan Y D, Li C, Geng Y Q. 2026. Enhanced photoresponse in WSe2/MoS2 heterobilayers optoelectronic device via programmable local nanostrain engineering. Int. J. Extrem. Manuf. 8 015512.. DOI: 10.1088/2631-7990/ae15c8.
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